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首頁 >DS1230AB>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
DS1230AB-P150IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS
DS1230ABP-150-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS
DS1230AB-P200	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS
DS1230ABP-200	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS
DS1230AB-P200IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS
DS1230ABP-200-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS
DS1230AB-P70	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS
DS1230ABP-70	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS
DS1230AB-P70IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS
DS1230ABP-70-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS

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技術(shù)參數(shù)

Memory Type：
NV SRAM
Memory Size：
32K x 8
Bus Type：
Parallel
Features：
DIP with Internal Battery
VSUPPLY (min)(V)：
4.75
VSUPPLY (max)(V)：
5.25
RoHS Available：
See Data Sheet
Oper. Temp.(°C)：
-40 to +85
Package/ Pins：
MOD/28
Smallest Available Pckg. (max w/pins)(mm2)：
629.9
Budgetary Price (See Notes)：
$14.97 @1k

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市佳鑫美電子科技有限公司	DS1230AB	DALLAS	25+		2987	只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!	詢價(jià)
深圳市星辰微電科技有限公司	DS1230AB	ADI	25+	Encapsulated Dual-In-Line Modu	5500	256k非易失SRAM	詢價(jià)
諦輝(北京/上海/青島 )電子科技有限公司	DS1230ABP-70IND		25+	DIP-16	18000	原廠直接發(fā)貨進(jìn)口原裝	詢價(jià)
深圳市卓越微芯電子有限公司	DS1230AB-120+	DALLAS	25+	DIP-28	30	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市凌旭科技有限公司	DS1230AB-200IND	DALLAS	2016+	DIP	3000	主營TI,絕對(duì)原裝,假一賠十,可開17%增值稅發(fā)票!	詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	DS1230AB-200	DS	05+	原廠原裝	4304	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	DS1230AB-150	DALLAS	23+	DIP28	5500	現(xiàn)貨,全新原裝	詢價(jià)
深圳市一線半導(dǎo)體有限公司	DS1230AB-120		24+	DIP	8		詢價(jià)
深圳市弘為電子有限公司	DS1230AB-70	DAL	24+	(DIP)	613	原裝現(xiàn)貨假一罰十	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	DS1230AB-120	DALLAS	23+	WSO-16	5000	原裝正品,假一罰十	詢價(jià)

更多DS1230AB供應(yīng)商更新時(shí)間2026-1-22 10:49:00

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