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首頁 >DS1230AB>規(guī)格書列表

型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
DS1230AB	文件：222.21 Kbytes Page：10 Pages	256k Nonvolatile SRAM 文件：222.21 Kbytes 頁數(shù)：10 Pages	MAXIM 美信	MAXIM
DS1230AB	文件：222.21 Kbytes Page：10 Pages	256k Nonvolatile SRAM 文件：222.21 Kbytes 頁數(shù)：10 Pages	DALLAS	DALLAS
DS1230AB-100	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS
DS1230AB-100IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS
DS1230AB-100-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS
DS1230AB-120	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS
DS1230AB-120IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS
DS1230AB-120-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS
DS1230AB-150	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS
DS1230AB-150IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁數(shù)：12 Pages	DALLAS	DALLAS

技術(shù)參數(shù)

Memory Type：
NV SRAM
Memory Size：
32K x 8
Bus Type：
Parallel
Features：
DIP with Internal Battery
VSUPPLY (min)(V)：
4.75
VSUPPLY (max)(V)：
5.25
RoHS Available：
See Data Sheet
Oper. Temp.(°C)：
-40 to +85
Package/ Pins：
MOD/28
Smallest Available Pckg. (max w/pins)(mm2)：
629.9
Budgetary Price (See Notes)：
$14.97 @1k

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市佳鑫美電子科技有限公司	DS1230AB	DALLAS	25+		2987	只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!	詢價
深圳市星辰微電科技有限公司	DS1230AB	ADI	25+	Encapsulated Dual-In-Line Modu	5500	256k非易失SRAM	詢價
諦輝(北京/上海/青島 )電子科技有限公司	DS1230ABP-70IND		25+	DIP-16	18000	原廠直接發(fā)貨進口原裝	詢價
深圳市卓越微芯電子有限公司	DS1230AB-120+	DALLAS	25+	DIP-28	30	百分百原裝正品真實公司現(xiàn)貨庫存本公司只做原裝可	詢價
深圳市凌旭科技有限公司	DS1230AB-200IND	DALLAS	2016+	DIP	3000	主營TI,絕對原裝,假一賠十,可開17%增值稅發(fā)票!	詢價
芯有半導(dǎo)體（深圳）有限公司	DS1230AB-200	DS	05+	原廠原裝	4304	只做全新原裝真實現(xiàn)貨供應(yīng)	詢價
深圳市毅創(chuàng)騰電子科技有限公司	DS1230AB-150	DALLAS	23+	DIP28	5500	現(xiàn)貨,全新原裝	詢價
深圳市一線半導(dǎo)體有限公司	DS1230AB-120		24+	DIP	8		詢價
深圳市弘為電子有限公司	DS1230AB-70	DAL	24+	(DIP)	613	原裝現(xiàn)貨假一罰十	詢價
齊創(chuàng)科技(上海,北京,青島)有限公司	DS1230AB-120	DALLAS	23+	WSO-16	5000	原裝正品,假一罰十	詢價

更多DS1230AB供應(yīng)商更新時間2026-1-21 15:02:00

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