<thead id="6dxzi"><s id="6dxzi"></s></thead>

    <strike id="6dxzi"><object id="6dxzi"><label id="6dxzi"></label></object></strike>

      <track id="6dxzi"><b id="6dxzi"></b></track>
    <th id="6dxzi"><input id="6dxzi"></input></th>

    <i id="6dxzi"><nobr id="6dxzi"></nobr></i>

    首頁 >DS1230>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    DS1230Y-70IND

    256k Nonvolatile SRAM

    DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

    文件:213.86 Kbytes 頁數(shù):12 Pages

    DALLAS

    DS1230Y-70-IND

    256k Nonvolatile SRAM

    DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

    文件:213.86 Kbytes 頁數(shù):12 Pages

    DALLAS

    DS1230Y-85

    256k Nonvolatile SRAM

    DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

    文件:213.86 Kbytes 頁數(shù):12 Pages

    DALLAS

    DS1230Y-85IND

    256k Nonvolatile SRAM

    DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

    文件:213.86 Kbytes 頁數(shù):12 Pages

    DALLAS

    DS1230Y-85-IND

    256k Nonvolatile SRAM

    DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

    文件:213.86 Kbytes 頁數(shù):12 Pages

    DALLAS

    DS1230Y-AB

    256k Nonvolatile SRAM

    DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

    文件:213.86 Kbytes 頁數(shù):12 Pages

    DALLAS

    DS1230Y-P100

    256k Nonvolatile SRAM

    DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

    文件:213.86 Kbytes 頁數(shù):12 Pages

    DALLAS

    DS1230YP-100

    256k Nonvolatile SRAM

    DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

    文件:213.86 Kbytes 頁數(shù):12 Pages

    DALLAS

    DS1230Y-P100IND

    256k Nonvolatile SRAM

    DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

    文件:213.86 Kbytes 頁數(shù):12 Pages

    DALLAS

    DS1230YP-100-IND

    256k Nonvolatile SRAM

    DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

    文件:213.86 Kbytes 頁數(shù):12 Pages

    DALLAS

    技術參數(shù)

    • Memory Type:

      NV SRAM

    • Memory Size:

      32K x 8

    • Bus Type:

      Parallel

    • Features:

      DIP with Internal Battery

    • VSUPPLY (min)(V):

      3

    • VSUPPLY (max)(V):

      3.6

    • RoHS Available:

      See Data Sheet

    • Oper. Temp.(°C):

      -40 to +85

    • Package/ Pins:

      MOD/28

    • Smallest Available Pckg. (max w/pins)(mm2):

      629.9

    • Budgetary Price (See Notes):

      $14.39 @1k

    供應商型號品牌批號封裝庫存備注價格
    DALLAS
    05+
    1000
    全新原裝 絕對有貨
    詢價
    DS
    23+
    DIP
    5000
    原裝正品,假一罰十
    詢價
    DALLAS
    23+
    DIP28
    65480
    詢價
    DS
    23+
    DIP
    35516
    ##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術
    詢價
    2023+
    3000
    進口原裝現(xiàn)貨
    詢價
    DS
    23+
    原廠正規(guī)渠道
    5000
    專注配單,只做原裝進口現(xiàn)貨
    詢價
    DALLAS
    24+
    DIP-28
    37500
    全新原裝現(xiàn)貨,量大價優(yōu)!
    詢價
    DALLAS
    24+
    NA
    7500
    只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718
    詢價
    ADI
    25+
    Encapsulated Dual-In-Line Modu
    5500
    3.3V、256k非易失SRAM
    詢價
    MAXIM
    13+
    PWRCP
    3758
    原裝分銷
    詢價
    更多DS1230供應商 更新時間2026-1-22 9:16:00

    <thead id="6dxzi"><s id="6dxzi"></s></thead>

      <strike id="6dxzi"><object id="6dxzi"><label id="6dxzi"></label></object></strike>

        <track id="6dxzi"><b id="6dxzi"></b></track>
      <th id="6dxzi"><input id="6dxzi"></input></th>

      <i id="6dxzi"><nobr id="6dxzi"></nobr></i>
      黄色性爱视频在线播放 | 三级久久电影网址 | 亚洲 在线 免费 视频 | 中文字幕精品在线 | 久热久9999 | 成人精品免费视频 | 久久99e | 国产日韩欧美在线观看 | 青娱乐国产精品视频网站 | 亚欧高清视频 |