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首頁(yè) >DS1230>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
DS1230AB-P100IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁(yè)數(shù)：12 Pages	DALLAS	DALLAS
DS1230ABP-100-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁(yè)數(shù)：12 Pages	DALLAS	DALLAS
DS1230AB-P120	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁(yè)數(shù)：12 Pages	DALLAS	DALLAS
DS1230ABP-120	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁(yè)數(shù)：12 Pages	DALLAS	DALLAS
DS1230AB-P120IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁(yè)數(shù)：12 Pages	DALLAS	DALLAS
DS1230ABP-120-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁(yè)數(shù)：12 Pages	DALLAS	DALLAS
DS1230AB-P150	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁(yè)數(shù)：12 Pages	DALLAS	DALLAS
DS1230ABP-150	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁(yè)數(shù)：12 Pages	DALLAS	DALLAS
DS1230AB-P150IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁(yè)數(shù)：12 Pages	DALLAS	DALLAS
DS1230ABP-150-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 頁(yè)數(shù)：12 Pages	DALLAS	DALLAS

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技術(shù)參數(shù)

Memory Type：
NV SRAM
Memory Size：
32K x 8
Bus Type：
Parallel
Features：
DIP with Internal Battery
VSUPPLY (min)(V)：
3
VSUPPLY (max)(V)：
3.6
RoHS Available：
See Data Sheet
Oper. Temp.(°C)：
-40 to +85
Package/ Pins：
MOD/28
Smallest Available Pckg. (max w/pins)(mm2)：
629.9
Budgetary Price (See Notes)：
$14.39 @1k

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
芯有半導(dǎo)體（深圳）有限公司	DS1230W	DALLAS	05+		1000	全新原裝絕對(duì)有貨	詢(xún)價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	DS1230W	DS	23+	DIP	5000	原裝正品,假一罰十	詢(xún)價(jià)
深圳市賽爾通科技有限公司	DS1230W	DALLAS	23+	DIP28	65480		詢(xún)價(jià)
深圳市能元時(shí)代電子有限公司	DS1230W	DS	23+	DIP	35516	##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)	詢(xún)價(jià)
上海凌岳電子科技有限公司（上海涵恩科技）	DS1230W		2023+		3000	進(jìn)口原裝現(xiàn)貨	詢(xún)價(jià)
深圳市安富世紀(jì)電子有限公司	DS1230W	DS	23+	原廠(chǎng)正規(guī)渠道	5000	專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨	詢(xún)價(jià)
深圳市科達(dá)星科技有限公司	DS1230W	DALLAS	24+	DIP-28	37500	全新原裝現(xiàn)貨,量大價(jià)優(yōu)!	詢(xún)價(jià)
深圳市富芯樂(lè)電子科技有限公司	DS1230W	DALLAS	24+	NA	7500	只做原裝正品現(xiàn)貨歡迎來(lái)電查詢(xún)15919825718	詢(xún)價(jià)
深圳市星辰微電科技有限公司	DS1230W	ADI	25+	Encapsulated Dual-In-Line Modu	5500	3.3V、256k非易失SRAM	詢(xún)價(jià)
深圳市粵科源興科技有限公司	DS1230WP-100IND+	MAXIM	13+	PWRCP	3758	原裝分銷(xiāo)	詢(xún)價(jià)

更多DS1230供應(yīng)商更新時(shí)間2026-1-20 10:32:00

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