DRV8329-Q1 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features ? 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump ? Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr

文件：3.2972 Mbytes 頁(yè)數(shù)：57 Pages

TI

德州儀器

DRV8329-Q1 4.5 to 60V Three-phase BLDC Gate Driver

1 Features ? 65V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump ? Bootstrap based Gate Driver Architecture – 1000mA Maximum Peak Source Current

文件：3.28689 Mbytes 頁(yè)數(shù)：58 Pages

TI

德州儀器

DRV8329-Q1 4.5 to 60V Three-phase BLDC Gate Driver

1 Features ? 65V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump ? Bootstrap based Gate Driver Architecture – 1000mA Maximum Peak Source Current

文件：3.28689 Mbytes 頁(yè)數(shù)：58 Pages

TI

德州儀器

具有單個(gè)電流檢測(cè)放大器的汽車級(jí) 60V 三相柵極驅(qū)動(dòng)器

The DRV8329-Q1 family of devices is an integrated gate driver for three-phase applications. The devices provide three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The device generates the correct gate drive voltages using an internal charge pump a ? 65-V Three Phase Half-Bridge Gate Driver \n? Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS)\n? 4.5 to 60-V Operating Voltage Range\n? Supports 100% PWM Duty Cycle with Trickle Charge pump\n \n? Bootstrap based Gate Driver Architecture \n? 1000-mA Maximum Peak Source Current\n? 2000;

TI

德州儀器