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    首頁 >DRV8329>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    DRV8329

    DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

    1 Features ? 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump ? Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current

    文件:3.13693 Mbytes 頁數(shù):57 Pages

    TI

    德州儀器

    DRV8329

    DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

    1 Features ? 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump ? Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current

    文件:3.16376 Mbytes 頁數(shù):57 Pages

    TI

    德州儀器

    DRV8329

    DRV8329-Q1 4.5 to 60 V Three-phase BLDC Gate Driver

    1 Features ? 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump ? Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr

    文件:3.2972 Mbytes 頁數(shù):57 Pages

    TI

    德州儀器

    DRV8329

    DRV8329-Q1 4.5 to 60V Three-phase BLDC Gate Driver

    1 Features ? 65V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump ? Bootstrap based Gate Driver Architecture – 1000mA Maximum Peak Source Current

    文件:3.28689 Mbytes 頁數(shù):58 Pages

    TI

    德州儀器

    DRV8329

    DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

    1 Features ? 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump ? Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr

    文件:3.27981 Mbytes 頁數(shù):61 Pages

    TI

    德州儀器

    DRV8329

    60-V 1000/2000 mA 3-phase gate driver with single current sense amplifier

    ? 65-V Three Phase Half-Bridge Gate Driver \n? 4.5 to 60-V Operating Voltage Range\n? Bootstrap based Gate Driver Architecture \n? 2000-mA Maximum Peak Sink Current\n? Integrated Current Sense Amplifier with low input offset (optimized for 1 shunt) \n? Hardware interface provides simple configuratio;

    TI

    德州儀器

    DRV8329_V01

    DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

    1 Features ? 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump ? Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current

    文件:3.16376 Mbytes 頁數(shù):57 Pages

    TI

    德州儀器

    DRV8329_V02

    DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

    1 Features ? 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump ? Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr

    文件:3.27981 Mbytes 頁數(shù):61 Pages

    TI

    德州儀器

    DRV8329A

    DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

    1 Features ? 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump ? Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr

    文件:3.27981 Mbytes 頁數(shù):61 Pages

    TI

    德州儀器

    DRV8329A

    DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

    1 Features ? 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100 PWM Duty Cycle with Trickle Charge pump ? Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Current

    文件:3.16376 Mbytes 頁數(shù):57 Pages

    TI

    德州儀器

    技術參數(shù)

    • Control method:

      External Control

    • Architecture:

      Gate Driver

    • Vs (Min) (V):

      4.5

    • Vs ABS (Max) (V):

      65

    • Features:

      Bootstrap Architecture for Gate Driver

    • Operating temperature range (C):

      -40 to 125

    供應商型號品牌批號封裝庫存備注價格
    TI德州儀器
    22+
    24000
    原裝正品現(xiàn)貨,實單可談,量大價優(yōu)
    詢價
    TI
    25+
    原封裝
    66330
    鄭重承諾只做原裝進口現(xiàn)貨
    詢價
    TI/德州儀器
    25+
    原廠封裝
    10280
    原廠授權代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源!
    詢價
    TI/德州儀器
    25+
    原廠封裝
    9999
    詢價
    TI/德州儀器
    25+
    原廠封裝
    10280
    詢價
    TI
    25+
    VQFN-40-EP(5x7)
    7734
    樣件支持,可原廠排單訂貨!
    詢價
    TI
    25+
    VQFN-40-EP(5x7)
    7786
    正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
    詢價
    TI
    23+
    N/A
    8000
    只做原裝現(xiàn)貨
    詢價
    TI
    23+
    N/A
    7000
    詢價
    更多DRV8329供應商 更新時間2026-1-22 8:01:00

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