絲印：DPAK；TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) ● Complements the FTB1184.

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絲印：DPAK；TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● High Transition Frequency

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絲印：DPAA；Package：10Ld3x3DFN；Dual LDO with Low Noise, Very High PSRR and Low IQ

Dual LDO with Low Noise, Very High PSRR and Low IQ ISL9000 is a high performance dual LDO capable of sourcing 300mA current from each output. It has a low standby current and very high PSRR and is stable with output capacitance of 1μF to 10μF with ESR of up to 200mΩ. The device integrates an ind

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絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；N-Channel MOSFET Transistor

? DESCRITION ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤3? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

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絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：320.97 Kbytes 頁數(shù)：2 Pages

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絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc Silicon PNP Power Transistor

文件：302.83 Kbytes 頁數(shù)：2 Pages

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絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc Silicon NPN Power Transistors

文件：277.26 Kbytes 頁數(shù)：2 Pages

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絲印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

文件：321.24 Kbytes 頁數(shù)：2 Pages

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絲印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：334.39 Kbytes 頁數(shù)：2 Pages

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絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：321.31 Kbytes 頁數(shù)：2 Pages

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