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          首頁(yè) >D84>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          D84BM2

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

          文件:331.24 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          D84BN2

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

          文件:331.25 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          D84BQ1

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 1.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

          文件:332.07 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          D84BQ2

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 1.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

          文件:331.96 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          D84CK2

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:332.4 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          D84CL2

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:331.7 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          D84CM2

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:331.69 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          D84CN2

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:331.69 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          D84CQ1

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 3A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:332.55 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          D84CQ2

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current : ID= 3A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

          文件:332.44 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          詳細(xì)參數(shù)

          • 型號(hào):

            D84

          • 功能描述:

            模擬開(kāi)關(guān) IC ANLG SWT SPDT 3.3V

          • RoHS:

          • 制造商:

            Texas Instruments

          • 開(kāi)關(guān)數(shù)量:

            2

          • 開(kāi)關(guān)配置:

            SPDT

          • 開(kāi)啟電阻(最大值):

            0.1 Ohms

          • 工作電源電壓:

            2.7 V to 4.5 V

          • 最大工作溫度:

            + 85 C

          • 安裝風(fēng)格:

            SMD/SMT

          • 封裝/箱體:

            DSBGA-16

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          更多D84供應(yīng)商 更新時(shí)間2026-1-19 14:49:00
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