絲?。?strong>D84；Package：SOT-23；SMALL SIGNAL SCHOTTKY DIODE

Description The BAT54 series uses 40 V Schottky barrier diodes packaged in SOD- 23, SOD-323, SOD-523, SOT-23, SOT-323, or SOT-666. Features ■ Low conduction and reverse losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ Extremely fast switching ■ Surface mo

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STMICROELECTRONICS

意法半導(dǎo)體

絲?。?strong>D84；Package：SOT-23；Small signal Schottky diodes

Description The BAT54 series uses 40 V Schottky barrier diodes packaged in SOD- 23, SOD-323, SOD-523, SOT-23, SOT-323, or SOT-666. Features ■ Low conduction and reverse losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ Extremely fast switching ■ Surface mo

文件：158.85 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：D84；Package：XQFN-101,55x2；Dual low-ohmic single-pole double-throw analog switch

General description The NX3L4684 provides two low-ohmic single-pole double-throw analog switches, suitable for use as an analog or digital multiplexer/demultiplexer. It has a digital select input (nS) with Schmitt trigger action, two independent inputs/outputs (nY0, nY1) and a common input/outp

文件：592.96 Kbytes 頁數(shù)：24 Pages

恩XP

絲?。?strong>D84；Package：HVSON-103x3；Dual low-ohmic single-pole double-throw analog switch

General description The NX3L4684 provides two low-ohmic single-pole double-throw analog switches, suitable for use as an analog or digital multiplexer/demultiplexer. It has a digital select input (nS) with Schmitt trigger action, two independent inputs/outputs (nY0, nY1) and a common input/outp

文件：592.96 Kbytes 頁數(shù)：24 Pages

恩XP

絲印：D84；Package：SOT-23；Small signal Schottky diodes

文件：163.06 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

RF LDMOS Wideband Integrated Power Amplifiers

The A2I09VD030N wideband integrated circuit is designed with on?chip matching that makes it usable from 575 to 1300 MHz. This multi?stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats. Features ? On?chip matching (50 ohm input, D

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恩XP

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB754 ·High collector current :IC=7A ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·High current switching applications ·Power amplifier applications

文件：126.01 Kbytes 頁數(shù)：3 Pages

SAVANTIC

Airfast RF Power LDMOS Transistor

Designed for handheld two?way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large?signal, common?source amplifier applications in handheld radio equipment. Features ? Characterized for operation f

文件：195.94 Kbytes 頁數(shù)：13 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：331.53 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：331.23 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電