Miniature Snap-in Power Rocker Switches

Features/Benefits ? Momentary and maintained models ? PC and quick connect terminals ? Recessed bracket available — prevents accidental actuation ? RoHS compliant ? Gold plated options available

文件：482.55 Kbytes 頁數(shù)：5 Pages

CK-COMPONENTS

力特

DC/DC升壓轉(zhuǎn)換器

D501 DC/DC 芯片是采用CMOS 工藝制造的靜態(tài)電流極低的VFM 開關(guān)型直流/直流升壓轉(zhuǎn)換器,該芯片由振蕩器,VFM 控制電路,LX 開關(guān)驅(qū)動晶體管,基準電壓,單元誤差比較放大器,電壓采樣電阻,LX 開關(guān)保護電路等部分組成.D501 DC/DC 升壓轉(zhuǎn)換器具有低紋波高效率等特點,外圍只需接三個元件。 \n D501采用SOT-23-3L的封裝形式封裝。 ·只需少量的外接元件\n·極低的輸入電流\n·輸出電壓高精度2.5% \n·低紋波及低噪聲\n·啟動電壓低\n·高效率,典型值為80%\n·封裝體積小;

Silicore

芯谷科技

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017 FOR LOW FREQUENCY

2SD5017 -> Correct Partnumber : 3DD5017 3DD5017 is high breakdown voltage of NPNbipolar transistor. The main process of manufacture : high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product.

文件：151.16 Kbytes 頁數(shù)：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions

文件：102.3 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

NPN (COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

* NPN Triple Diffused Planar Silicon Transistor * High Collector-Base Voltage Vcbo = 1500V

文件：172.66 Kbytes 頁數(shù)：5 Pages

SAMSUNG

三星

I.S. SIL3 2-Wire HART? Transmitter Power Supply

文件：278.79 Kbytes 頁數(shù)：1 Pages

GMI

I.S. SIL3 2-Wire HART? Transmitter Power Supply

文件：278.79 Kbytes 頁數(shù)：1 Pages

GMI

I.S. SIL3 2-Wire HART? Transmitter Power Supply

文件：278.79 Kbytes 頁數(shù)：1 Pages

GMI

METAL GATE RF SILICON FET

文件：251.49 Kbytes 頁數(shù)：6 Pages

SEME-LAB

METAL GATE RF SILICON FET

文件：31.32 Kbytes 頁數(shù)：2 Pages

SEME-LAB