NPN (COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

* NPN Triple Diffused Planar Silicon Transistor * High Collector-Base Voltage Vcbo = 1500V

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SAMSUNG

三星

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions

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ISC

無(wú)錫固電

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017 FOR LOW FREQUENCY

2SD5017 -> Correct Partnumber : 3DD5017 3DD5017 is high breakdown voltage of NPNbipolar transistor. The main process of manufacture : high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product.

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JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W - 50V - 175MHz SINGLE ENDED

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SEME-LAB

Gold metallised multi-purpose silicon DMOS RF FET

?Simplified amplifier design\n? Suitable for broad band applications\n? Low C(rss)\n? Useful P(o) at 1 GHz\n? Simple bias cicuits\n? Low noise\n? High gain - 10 dB minimum;

TT Electronics