Complementary Dual CPH6 Power MOSFET

文件：412.58 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導體

Complementary Dual CPH6 Power MOSFET

文件：412.58 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導體

Low Power Microcontroller with RC and 32kHz oscillators and 9 high drive outputs

文件：793.63 Kbytes 頁數(shù)：39 Pages

EMMICRO

35V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications. Features ? 59 A, 35 V RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON

文件：203.89 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=59A@ TC=25℃ ·Drain Source Voltage : VDSS=35V(Min) ·Static Drain-Source On-Resistance : RDS(on) =10mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：351.28 Kbytes 頁數(shù)：2 Pages

ISC

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