35V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications. Features ? 59 A, 35 V RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=59A@ TC=25℃ ·Drain Source Voltage : VDSS=35V(Min) ·Static Drain-Source On-Resistance : RDS(on) =10mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

無(wú)錫固電

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 30V, ID= 80A RDS(ON)

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BYCHIP

百域芯

N 溝道，PowerTrench? MOSFET，35V，59A，10mΩ

此N溝道MOSFET使用飛兆半導(dǎo)體專有PowerTrench技術(shù)生產(chǎn)，具有低Rdson和優(yōu)化的Bvdss能力，在各種應(yīng)用中都具有優(yōu)異的性能。 ?59 A, 35V\n?最大RDS(ON) = 10 mΩ @ VGS = 10 V\n?最大RDS(ON) = 13 mΩ @ VGS = 4.5 V\n?快速開(kāi)關(guān)\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體