NPN - RF Transistor Chip

Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bondin

文件：450.73 Kbytes 頁數(shù)：2 Pages

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Small Signal Transistor NPN - High Voltage Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 7.1 MILS ± 0.6 MILS Base Bonding Pad Area 5.5 x 5.5 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al-Si - 17,000? Back Side Metalization Au - 12,000?

文件：126.62 Kbytes 頁數(shù)：2 Pages

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Power Transistor NPN - Silicon Power Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 87 x 87 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 24 x 15 MILS Emitter Bonding Pad Area 38 x 16 MILS Top Side Metalization Al - 30,000? Back Side Metalization Ti/Ni/Ag - 11,000?

文件：216.93 Kbytes 頁數(shù)：2 Pages

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Intel? Core? i7 / Celeron? 3U CompactPCI BOARD

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3RD GEN. INTEL? CORE? 3U COMPACTPCI CPU BOARD

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5TH GEN. Intel? Core? 3U CompactPCI CPU BOARD

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3U CompactPCI CPU Board with 8th/9th Gen Intel? Core?

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Value 3U CompactPCI CPU Board with Intel? Celeron?

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Rechargeable Ni-MH Button

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ETCList of Unclassifed Manufacturers

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Electronics record tracking systems

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