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CMPA801B030D中文資料30 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier數(shù)據(jù)手冊MACOM規(guī)格書
| 廠商型號 |
CMPA801B030D |
| 功能描述 | 30 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier |
| 制造商 | MACOM Tyco Electronics |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2026-1-19 18:35:00 |
| 人工找貨 | CMPA801B030D價格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
CMPA801B030D規(guī)格書詳情
描述 Description
Cree’s CMPA801B030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
Features
28 dB Small Signal Gain40 W Typical PSATOperation up to 28 VHigh Breakdown VoltageHigh Temperature OperationSize 0.142 x 0.188 x 0.004 inch
技術(shù)參數(shù)
- 制造商編號
：CMPA801B030D
- 生產(chǎn)廠家
：MACOM
- Application
：Radar
- Typical Power (PSAT)
：40 W
- Operating Voltage
：28 V
- Frequency
：8.0 - 11.0 GHz
- Small Signal Gain
：28 dB
- Size
：0.142 x 0.188 x 0.004
- Technology
：GaN on SiC
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+/25+ |
1210 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||||
CENTRAL |
25+ |
2146 |
公司優(yōu)勢庫存 熱賣中! |
詢價 | |||
Centralsemi |
20+ |
SOT-23 |
36800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
CENTRAL |
25+ |
SOT-23 |
3200 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售! |
詢價 | ||
CENTRAL |
25+ |
SOT-23 |
3000 |
原裝正品,假一罰十! |
詢價 | ||
CHAMPION |
24+ |
SOP8 |
9987 |
公司現(xiàn)貨庫存,支持實(shí)單 |
詢價 | ||
MACOM Technology Solutions |
25+ |
- |
9350 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價 | ||
新 |
5 |
全新原裝 貨期兩周 |
詢價 | ||||
Wolfspeed |
25+ |
Tube |
4430 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
CENTRAL |
23+ |
SOT-23 |
50000 |
原裝正品 支持實(shí)單 |
詢價 |
