30 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier

Cree’s CMPA801B030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher t

MACOM

9 - 11 GHz, 40 W GaN HPA

Description Wolfspeed's CMPA801B030D1 is a 40W MMIC HPA utilizing Wolfspeed's high performance, 0.15um GaN on SiC production process. The CMPA801B030D1 operates from 8-11 GHz and supports both defense and commercial-relaed radar applications. The CMPA801B030D1 achieves 40 W of saturated output

文件：2.45268 Mbytes 頁(yè)數(shù)：20 Pages

WOLFSPEED

7.9 - 11.0 GHz, 40 W, Packaged GaN MMIC Power Amplifier

文件：4.64636 Mbytes 頁(yè)數(shù)：17 Pages

CREE

科銳

7.9 - 11.0 GHz, 40 W, Packaged GaN MMIC Power Amplifier

Description Wolfspeed’s CMPA801B030S is a packaged, 40W HPA utilizing Wolfspeed’s high performance, 0.15μm GaN-on-Silicon Carbide production process. The CMPA801B030S operates from 7.9 - 11.0 GHz and targets pulsed radar systems supporting both defense and commercial applications. With 2 stage

文件：4.98927 Mbytes 頁(yè)數(shù)：17 Pages

WOLFSPEED