N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 26 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

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CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor

Chenmko

力勤

Dual N-Channel MOSFET

文件：2.5967 Mbytes 頁數(shù)：5 Pages

JIANGSU

長電科技

Plastic-Encapsulate MOSFETS

文件：1.20786 Mbytes 頁數(shù)：3 Pages

ZPSEMIZP Semiconductor

至尚臻品

Dual N-Channel Enhancement Mode MOSFET

General Description The CMS9926A uses advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a unidirectional or bi-directional load switch. Features RDS(ON)=25mΩ @ VGS=4.5V RDS(ON)=30mΩ @ VGS=2.5V Dual MOSFET in surface mount package. High Density

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CMOS

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