絲?。?strong>CMS9926A；Package：SOP-8；Dual N-Channel Enhancement Mode MOSFET

General Description The CMS9926A uses advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a unidirectional or bi-directional load switch. Features RDS(ON)=25mΩ @ VGS=4.5V RDS(ON)=30mΩ @ VGS=2.5V Dual MOSFET in surface mount package. High Density

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CMOS

場效應(yīng)

MOS

CMOS

場效應(yīng)

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：235.34 Kbytes 頁數(shù)：7 Pages

CHAMP

虹冠電子

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件：140.79 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導(dǎo)體

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast

文件：166.97 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導(dǎo)體