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          首頁 >CHA2>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          CHA2190

          20-30GHz Low Noise Amplifier

          Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main

          文件:163.22 Kbytes 頁數(shù):9 Pages

          UMS

          CHA2190-99F/00

          20-30GHz Low Noise Amplifier

          Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main

          文件:163.22 Kbytes 頁數(shù):9 Pages

          UMS

          CHA2190-99FSLASH00

          20-30GHz Low Noise Amplifier

          Description The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main

          文件:163.22 Kbytes 頁數(shù):9 Pages

          UMS

          CHA2192

          24-26.5GHz Low Noise Amplifier

          Description The CHA2192 is a two stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a HE

          文件:92.63 Kbytes 頁數(shù):6 Pages

          UMS

          CHA2192-99F/00

          24-26.5GHz Low Noise Amplifier

          Description The CHA2192 is a two stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a HE

          文件:92.63 Kbytes 頁數(shù):6 Pages

          UMS

          CHA2192-99FSLASH00

          24-26.5GHz Low Noise Amplifier

          Description The CHA2192 is a two stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a HE

          文件:92.63 Kbytes 頁數(shù):6 Pages

          UMS

          CHA2193

          20-30GHz Low Noise Amplifier

          Description The CHA2193 is a three stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a

          文件:112.15 Kbytes 頁數(shù):10 Pages

          UMS

          CHA2194

          36-44GHz Low Noise Amplifier

          Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication . The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air br

          文件:195.11 Kbytes 頁數(shù):10 Pages

          UMS

          CHA2194-99F/00

          36-44GHz Low Noise Amplifier

          Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication . The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air br

          文件:195.11 Kbytes 頁數(shù):10 Pages

          UMS

          CHA2194-99FSLASH00

          36-44GHz Low Noise Amplifier

          Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication . The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air br

          文件:195.11 Kbytes 頁數(shù):10 Pages

          UMS

          技術(shù)參數(shù)

          • Reference produit:

            ?CHA2050-QDG

          • RF Bandwidth (GHz) min-max:

            ?17 - 21.5

          • Bias (mA):

            ?30

          • Case:

            ?QFN

          • Bias (V):

            ?2

          • Gain (dB):

            ?

          • Gain Flatness (+/-dB):

            ?

          • Noise Figure (dB):

            ?

          • P-1dB OUT (dBm):

            ?

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          UMS
          24+
          SMD
          9
          詢價(jià)
          UMS
          23+
          裸片
          6500
          原裝正品,假一罰十
          詢價(jià)
          UMS
          2001
          SMD
          9
          原裝現(xiàn)貨海量庫存歡迎咨詢
          詢價(jià)
          UMS
          24+
          SMD
          1680
          UMS專營進(jìn)口原裝現(xiàn)貨假一賠十
          詢價(jià)
          UMS
          18+
          SMD
          85600
          保證進(jìn)口原裝可開17%增值稅發(fā)票
          詢價(jià)
          UMS
          25+
          N/A
          90000
          進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理
          詢價(jià)
          UMS
          13+
          NA
          100
          終端備貨原裝現(xiàn)貨-軍工器件供應(yīng)商
          詢價(jià)
          UMS
          三年內(nèi)
          1983
          只做原裝正品
          詢價(jià)
          最新
          2000
          原裝正品現(xiàn)貨
          詢價(jià)
          UMS
          2447
          QFN
          100500
          一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          詢價(jià)
          更多CHA2供應(yīng)商 更新時(shí)間2026-1-20 16:30:00
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