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          首頁 >CHA2>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          CHA2069-99F/00

          18-31GHz Low Noise Amplifier

          Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features ? Broad band performance

          文件:167 Kbytes 頁數(shù):8 Pages

          UMS

          CHA2069-99FSLASH00

          18-31GHz Low Noise Amplifier

          Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features ? Broad band performance

          文件:167 Kbytes 頁數(shù):8 Pages

          UMS

          CHA2069-QDG

          18-30GHz Low Noise Amplifier

          Description The CHA2069-QDG is a three-stage selfbiased wide band monolithic low noise amplifier. Typical applications range from telecommunication (point to point, point to multipoint, VSAT) to ISM and military markets. Main Features ■ Broadband performance 18-30GHz ■ 3dB noise figure ■ 20dB

          文件:439.47 Kbytes 頁數(shù):18 Pages

          UMS

          CHA2069RAF

          18-31GHz Low Noise Amplifier

          Description The monolithic microwave IC (MMIC) in the package is a three-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Mai

          文件:171.64 Kbytes 頁數(shù):7 Pages

          UMS

          CHA2069RAF/24

          18-31GHz Low Noise Amplifier

          Description The monolithic microwave IC (MMIC) in the package is a three-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Mai

          文件:171.64 Kbytes 頁數(shù):7 Pages

          UMS

          CHA2069RAFSLASH24

          18-31GHz Low Noise Amplifier

          Description The monolithic microwave IC (MMIC) in the package is a three-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Mai

          文件:171.64 Kbytes 頁數(shù):7 Pages

          UMS

          CHA2090

          17-24GHz Low Noise Amplifier

          Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Mai

          文件:130.83 Kbytes 頁數(shù):8 Pages

          UMS

          CHA2090-99F/00

          17-24GHz Low Noise Amplifier

          Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Mai

          文件:130.83 Kbytes 頁數(shù):8 Pages

          UMS

          CHA2090-99FSLASH00

          17-24GHz Low Noise Amplifier

          Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Mai

          文件:130.83 Kbytes 頁數(shù):8 Pages

          UMS

          CHA2091

          36-40GHz Low Noise Amplifier

          Description The CHA2091 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features ■ Broad

          文件:115.85 Kbytes 頁數(shù):8 Pages

          UMS

          技術(shù)參數(shù)

          • Reference produit:

            ?CHA2050-QDG

          • RF Bandwidth (GHz) min-max:

            ?17 - 21.5

          • Bias (mA):

            ?30

          • Case:

            ?QFN

          • Bias (V):

            ?2

          • Gain (dB):

            ?

          • Gain Flatness (+/-dB):

            ?

          • Noise Figure (dB):

            ?

          • P-1dB OUT (dBm):

            ?

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          UMS
          24+
          SMD
          9
          詢價(jià)
          UMS
          23+
          裸片
          6500
          原裝正品,假一罰十
          詢價(jià)
          UMS
          2001
          SMD
          9
          原裝現(xiàn)貨海量庫存歡迎咨詢
          詢價(jià)
          UMS
          24+
          SMD
          1680
          UMS專營進(jìn)口原裝現(xiàn)貨假一賠十
          詢價(jià)
          UMS
          18+
          SMD
          85600
          保證進(jìn)口原裝可開17%增值稅發(fā)票
          詢價(jià)
          UMS
          25+
          N/A
          90000
          進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理
          詢價(jià)
          UMS
          13+
          NA
          100
          終端備貨原裝現(xiàn)貨-軍工器件供應(yīng)商
          詢價(jià)
          UMS
          三年內(nèi)
          1983
          只做原裝正品
          詢價(jià)
          最新
          2000
          原裝正品現(xiàn)貨
          詢價(jià)
          UMS
          2447
          QFN
          100500
          一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨
          詢價(jià)
          更多CHA2供應(yīng)商 更新時(shí)間2026-1-20 16:30:00
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