150-W; 2900 – 3500-MHz; 50-V; GaN HEMT for S-Band Radar Systems

Rated Power = 150 W @ TCASE = 85°COperating Frequency = 2.9 – 3.5 GHzTransient 100 μsec – 300 μsec @ 20% Duty Cycle13.5 dB Power Gain @ TCASE = 85°C50 % Typical Drain Efficiency @ TCASE = 85°CInput Matched<0.3 dB Pulsed Amplitude Droop ? Rated Power = 150 W @ TCASE = 85°C \n?Operating Frequency = 2.9 – 3.5 GHz \n?Transient 100 μsec – 300 μsec @ 20% Duty Cycle \n?13.5 dB Power Gain @ TCASE = 85°C \n?50 % Typical Drain Efficiency @ TCASE = 85°C \n?Input Matched \n?<0.3 dB Pulsed Amplitude Droop;

MACOM

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

文件：853.99 Kbytes 頁(yè)數(shù)：10 Pages

CREE

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包裝：盒 類別：開發(fā)板，套件，編程器 射頻評(píng)估和開發(fā)套件，開發(fā)板 描述：CGHV35150F DEV BOARD WITH HEMT

WOLFSPEED

150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

文件：853.99 Kbytes 頁(yè)數(shù)：10 Pages

CREE

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150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

文件：853.99 Kbytes 頁(yè)數(shù)：10 Pages

CREE

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RADIAL LEADED INDUCTORS

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