| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 250V, 6.7A, RDS(ON) = 450mW @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件：123.5 Kbytes 頁(yè)數(shù)：4 Pages | CET 華瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 250V, 6.7A, RDS(ON) = 450mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired. 文件：589.2 Kbytes 頁(yè)數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 15A, RDS(ON) = 0.15 W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired. 文件：571.12 Kbytes 頁(yè)數(shù)：4 Pages | CET-MOS 華瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 200V, 15A, RDS(ON) = 0.15 Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-251 & TO-252 package. ■ Lead free product is acquired. 文件：505.8 Kbytes 頁(yè)數(shù)：5 Pages | CET 華瑞 | CET | ||
N-Channel MOSFET uses advanced trench technology 文件：1.54693 Mbytes 頁(yè)數(shù)：5 Pages | DOINGTER 杜因特 | DOINGTER | ||
N-Channel MOSFET uses advanced trench technology 文件：1.52203 Mbytes 頁(yè)數(shù)：5 Pages | DOINGTER 杜因特 | DOINGTER | ||
N-Channel MOSFET uses advanced trench technology 文件：1.9045 Mbytes 頁(yè)數(shù)：5 Pages | DOINGTER 杜因特 | DOINGTER | ||
N-Channel MOSFET uses advanced trench technology 文件：892.2 Kbytes 頁(yè)數(shù)：5 Pages | DOINGTER 杜因特 | DOINGTER | ||
N-Channel MOSFET uses advanced trench technology 文件：960.55 Kbytes 頁(yè)數(shù)：5 Pages | DOINGTER 杜因特 | DOINGTER | ||
N-Channel MOSFET uses advanced trench technology 文件：1.5619 Mbytes 頁(yè)數(shù)：5 Pages | DOINGTER 杜因特 | DOINGTER |
技術(shù)參數(shù)
- BVDSS(V)：
650
- Rds(on)mΩ@10V：
10500
- ID(A)：
1.2
- Qg(nC)@10V(typ)：
5.8
- RθJC(℃/W)：
3.5
- Pd(W)：
35.7
- Configuration：
Single
- Polarity：
N
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
CET |
23+ |
TO252 |
7000 |
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)! |
詢價(jià) | ||
CET |
25+ |
SMD2 |
2218 |
⊙⊙新加坡大量現(xiàn)貨庫(kù)存,深圳常備現(xiàn)貨!歡迎查詢!⊙ |
詢價(jià) | ||
CET |
25+ |
TO252 |
103 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
CET |
13+ |
5171 |
原裝分銷 |
詢價(jià) | |||
CET |
25+ |
DIP-14 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
CET |
17+ |
TO252 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
CET |
00+ |
SMD2 |
890 |
全新原裝100真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
CET |
12+ |
TO-252(DPAK) |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
SR |
23+ |
TO252 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
CET |
2016+ |
TO252 |
2500 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢價(jià) |
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