P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -10A, RDS(ON) = 19mW @VGS = -10V. RDS(ON) = 29mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-223 package. RoHS compliant.

文件：641.27 Kbytes 頁數(shù)：5 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -35A, RDS(ON) = 16mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 27mW @VGS = -4.5V. RoHS compliant.

文件：778.43 Kbytes 頁數(shù)：5 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -36A, RDS(ON) = 16 m W @VGS = -10V. RDS(ON) = 27m W @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：891.64 Kbytes 頁數(shù)：6 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -30A, RDS(ON) = 17mW @VGS = -10V. RDS(ON) = 26mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：1.01027 Mbytes 頁數(shù)：6 Pages

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