N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 8A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-223 package.

文件：396.54 Kbytes 頁數(shù)：4 Pages

CET

華瑞

N Channel MOSFET

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 25A, RDS(ON) = 28m? @VGS = 10V. RDS(ON) = 39m? @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：111.36 Kbytes 頁數(shù)：4 Pages

CET

華瑞

N-Channel MOSFET uses advanced trench technology

文件：881.12 Kbytes 頁數(shù)：5 Pages

DOINGTER

杜因特

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 7.5 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switchi

文件：301.36 Kbytes 頁數(shù)：3 Pages

CHENMKO

力勤