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          首頁(yè) >CEP5>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          CEP50N06

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

          文件:391.29 Kbytes 頁(yè)數(shù):4 Pages

          CET

          華瑞

          CEP50N06

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 60V, 50A ,RDS(ON) = 22mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

          文件:636.35 Kbytes 頁(yè)數(shù):4 Pages

          CET-MOS

          華瑞

          CEP50N06

          50A,60V Heatsink Planar N-Channel Power MOSFET

          General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M

          文件:1.4536 Mbytes 頁(yè)數(shù):6 Pages

          THINKISEMI

          思祁半導(dǎo)體

          CEP50N06G

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 60V, 55A ,RDS(ON) = 20mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.

          文件:587.93 Kbytes 頁(yè)數(shù):5 Pages

          CET-MOS

          華瑞

          CEP50N10

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 100V, 50A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

          文件:642.37 Kbytes 頁(yè)數(shù):4 Pages

          CET-MOS

          華瑞

          CEP50N10

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired.

          文件:430.82 Kbytes 頁(yè)數(shù):4 Pages

          CET

          華瑞

          CEP50P03

          P-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ -30V, -47A, RDS(ON) =20m? @VGS = -10V. RDS(ON) =32m? @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

          文件:104.25 Kbytes 頁(yè)數(shù):4 Pages

          CET

          華瑞

          CEP50P03

          P-Channel Enhancement Mode Field Effect Transistor

          FEATURES -30V, -47A, RDS(ON) =20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =32mW @VGS = -4.5V. Lead free product is acquired.

          文件:900.88 Kbytes 頁(yè)數(shù):4 Pages

          CET-MOS

          華瑞

          CEP5175

          P-Channel Enhancement Mode Field Effect Transistor

          FEATURES -55V, -50A, RDS(ON) = 23mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 28mW @VGS = 4.5V.

          文件:503.67 Kbytes 頁(yè)數(shù):4 Pages

          CET-MOS

          華瑞

          CEP5175

          P-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ -55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.

          文件:683.38 Kbytes 頁(yè)數(shù):4 Pages

          CET

          華瑞

          詳細(xì)參數(shù)

          • 型號(hào):

            CEP5

          • 制造商:

            CET

          • 制造商全稱:

            Chino-Excel Technology

          • 功能描述:

            N-Channel Enhancement Mode Field Effect Transistor

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          CET/華瑞
          25+
          TO-220
          20300
          CET/華瑞原裝特價(jià)CEP51A3即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
          詢價(jià)
          CET
          23+
          TO220/3
          7000
          絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
          詢價(jià)
          CET
          24+
          TO2203
          224
          詢價(jià)
          SR
          23+
          TO-220
          5000
          原裝正品,假一罰十
          詢價(jià)
          CET/華瑞
          23+
          TO-220
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          C
          22+
          TO-220
          6000
          十年配單,只做原裝
          詢價(jià)
          CET華瑞
          20+
          TO-220
          20
          一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價(jià)
          CET
          TO-220
          50000
          一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
          詢價(jià)
          CET
          2023+
          TO220
          5800
          進(jìn)口原裝,現(xiàn)貨熱賣
          詢價(jià)
          VBsemi
          23+
          TO-220
          8560
          受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
          詢價(jià)
          更多CEP5供應(yīng)商 更新時(shí)間2026-1-19 17:05:00
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