Dual N-Channel Enhancement Mode Field Effect Transistor

Feature ● 20V/, 6A, RDS(ON) = 30mΩ(MAX) @VGS = 4.5V. RDS(ON) = 40mΩ(MAX) @VGS = 2.5V. ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOP-8 for Surface Mount Package.

文件：505.03 Kbytes 頁數(shù)：5 Pages

CET

華瑞

Dual N-Channel Enhancement Mode MOSFET

Feature ● 20V/6A, RDS(ON) = 33mΩ(MAX) @VGS = 4.5V. RDS(ON) = 50mΩ(MAX) @VGS = 2.5V. ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOP-8 for Surface Mount Package. Applications ● LI-ION Protection Circuit

文件：382.35 Kbytes 頁數(shù)：2 Pages

ZPSEMIZP Semiconductor

至尚臻品

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 7A, RDS(ON) = 25mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：590.19 Kbytes 頁數(shù)：5 Pages

CET-MOS

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Dual N-Channel 20-V (D-S) MOSFET

文件：986.07 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

N Channel MOSFET

CET

華瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 6A, RDS(ON) = 27mW @VGS = 4.5V. RDS(ON) = 40mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：603.12 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞

絲印：9926；Package：SOP-8；Dual N-Channel Enhancement Mode Field Effect Transistor

Features VDS (V) = 20V ID = 7A RDS(ON)

文件：1.00679 Mbytes 頁數(shù)：5 Pages

UMW

友臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/9926/marking.html">9926；Package：SOP-8；Dual N-Channel Enhancement Mode Field Effect Transistor

Features VDS (V) = 20V ID = 7A RDS(ON)

文件：350.97 Kbytes 頁數(shù)：5 Pages

EVVOSEMI

翊歐

Dual N-Channel Enhancement Mode Field Effect Transistor

文件：140.59 Kbytes 頁數(shù)：4 Pages

CET

華瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

文件：414.96 Kbytes 頁數(shù)：4 Pages

CET

華瑞