Bidirectional ESD / Transient Suppressors

文件：111.77 Kbytes 頁數(shù)：2 Pages

COMCHIP

典琦

Euro Strain Relief Bushings

文件：146.85 Kbytes 頁數(shù)：1 Pages

HEYCO

絲印：CEE；Package：SOD-123FL；TRANSIENT VOLTAGE SUPPRESSOR

文件：1.01244 Mbytes 頁數(shù)：4 Pages

CHENDA

辰達(dá)半導(dǎo)體

絲?。?strong>CEE；Package：SOD-123FL；Surface Mount Transient Voltage Suppressor Power 200W

文件：1.25369 Mbytes 頁數(shù)：4 Pages

JUXING

廣東鉅興電子

絲?。?strong>CEE；Package：SOD-123FL；Surface mount transient voltage suppressor power 200 watts

文件：495.59 Kbytes 頁數(shù)：4 Pages

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實(shí)業(yè)有限公司

絲?。?strong>CEE；Package：SOD123FL；Surface mount transient voltage suppressor power 200 watts

文件：438.38 Kbytes 頁數(shù)：4 Pages

YFWDIODE

佑風(fēng)微

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 1.3A, RDS(ON) = 8.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-126 package. Lead-free plating ; RoHS compliant.

文件：721.46 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 600V, 1.3A, RDS(ON) = 8.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-126 package.

文件：461.29 Kbytes 頁數(shù)：4 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-126 package.

文件：462.09 Kbytes 頁數(shù)：4 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 2.0A, RDS(ON) = 5.0W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-126 package. Lead-free plating ; RoHS compliant.

文件：723.02 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞