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          首頁(yè) >CEC>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          CEC220J

          Disc Ceramic Capacitors EIA Class 1 Temperature Compensating Capacitors

          EIA Class 1 Temperature Compensating Capacitors EIA Class 1 temperature compensating capacitors are ideal for timing and oscillating circuits. They are conformally coated with one inch minimum radial leads. EIA Class 1 Temperature Compensating Capacitors Highlights ? Small size ? Conformally c

          文件:177.95 Kbytes 頁(yè)數(shù):1 Pages

          CDE

          CEC221J

          Disc Ceramic Capacitors EIA Class 1 Temperature Compensating Capacitors

          EIA Class 1 Temperature Compensating Capacitors EIA Class 1 temperature compensating capacitors are ideal for timing and oscillating circuits. They are conformally coated with one inch minimum radial leads. EIA Class 1 Temperature Compensating Capacitors Highlights ? Small size ? Conformally c

          文件:177.95 Kbytes 頁(yè)數(shù):1 Pages

          CDE

          CEC2533

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 25V, 44A, RDS(ON) = 8 mW @VGS = 10V. RDS(ON) = 13 mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

          文件:770.06 Kbytes 頁(yè)數(shù):5 Pages

          CET-MOS

          華瑞

          CEC2609

          Dual Enhancement Mode Field Effect Transistor (N and P Channel)

          20V, 4.8A, RDS(ON) = 38mW @VGS = 4.5V. FEATURES RDS(ON) = 55mW @VGS = 2.5V. -20V, -3.0A, RDS(ON) = 100mW @VGS = -4.5V. RDS(ON) = 145mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. S2

          文件:680.64 Kbytes 頁(yè)數(shù):7 Pages

          CET-MOS

          華瑞

          CEC3062

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 30V, 48A, RDS(ON) = 6.7mW @VGS = 10V. RDS(ON) = 8.7mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

          文件:462.84 Kbytes 頁(yè)數(shù):5 Pages

          CET-MOS

          華瑞

          CEC3115

          P-Channel Enhancement Mode Field Effect Transistor

          FEATURES -30V, -36A, RDS(ON) = 12mW @VGS = -10V. RDS(ON) = 16mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

          文件:440.47 Kbytes 頁(yè)數(shù):5 Pages

          CET-MOS

          華瑞

          CEC3133

          P-Channel Enhancement Mode Field Effect Transistor

          FEATURES -30V, -30A, RDS(ON) = 17mW @VGS = -10V. RDS(ON) = 26mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

          文件:748.28 Kbytes 頁(yè)數(shù):5 Pages

          CET-MOS

          華瑞

          CEC3257

          Dual P-Channel Enhancement Mode Field Effect Transistor

          FEATURES -30V, -17A, RDS(ON) = 25mW @VGS = -10V. RDS(ON) = 32mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

          文件:517.62 Kbytes 頁(yè)數(shù):5 Pages

          CET-MOS

          華瑞

          CEC3633

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 30V, 46A, RDS(ON) = 7.2mW @VGS = 10V. RDS(ON) = 10mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

          文件:586.01 Kbytes 頁(yè)數(shù):4 Pages

          CET-MOS

          華瑞

          CEC3833

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 30V, 17A, RDS(ON) = 5.0mW @VGS = 10V. RDS(ON) = 7.2mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

          文件:680.2 Kbytes 頁(yè)數(shù):4 Pages

          CET-MOS

          華瑞

          晶體管資料

          • 型號(hào):

            BC869

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-PNP

          • 性質(zhì):

            表面帖裝型 (SMD)_低頻或音頻放大 (LF)_TR

          • 封裝形式:

            貼片封裝

          • 極限工作電壓:

            25V

          • 最大電流允許值:

            1A

          • 最大工作頻率:

            60MHZ

          • 引腳數(shù):

            3

          • 可代換的型號(hào):

            BCX51,BCX52,BCX69,

          • 最大耗散功率:

          • 放大倍數(shù):

          • 圖片代號(hào):

            H-100

          • vtest:

            25

          • htest:

            60000000

          • atest:

            1

          • wtest:

            0

          技術(shù)參數(shù)

          • Package name:

            SOT89

          • Size (mm):

            4.5 x 2.5 x 1.5

          • Polarity:

            PNP

          • Ptot (mW):

            500

          • VCEO [max] (V):

            -20

          • IC [max] (mA):

            -2000

          • hFE [min]:

            50

          • hFE [max]:

            375

          • Tj [max] (°C):

            150

          • fT [min] (MHz):

            40

          • Automotive qualified:

            Y

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          恩XP
          24+
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          ROHM/羅姆
          2402+
          DIP
          14590
          優(yōu)勢(shì)代理渠道,原裝現(xiàn)貨,可全系列訂貨
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          24+
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          十年沉淀唯有原裝
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          23+
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          12000
          一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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          更多CEC供應(yīng)商 更新時(shí)間2026-1-18 22:59:00
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