Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V, 4.8A, RDS(ON) = 38mW @VGS = 4.5V. FEATURES RDS(ON) = 55mW @VGS = 2.5V. -20V, -3.0A, RDS(ON) = 100mW @VGS = -4.5V. RDS(ON) = 145mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. S2

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CET-MOS

華瑞

Dual N & P MOSFET

CET

華瑞

Dual Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 3.5A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V. ■ -20V, -2.5A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 145mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capa

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CET

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V, 4A, RDS(ON) = 45mW @VGS = 4.5V. FEATURES RDS(ON) = 55mW @VGS = 2.5V. -20V, -2.8A, RDS(ON) = 90mW @VGS = -4.5V. RDS(ON) = 120mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

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CET-MOS

華瑞

P-Ch 20V Fast Switching MOSFETs

Description The FKN2609 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN2609 meets the RoHS and Green Product requirement with full function reliability approved.

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FETEK

臺灣東沅