N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 250V, 8.1A, RDS(ON) = 450m? @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：505.57 Kbytes 頁數(shù)：5 Pages

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 250V, 8.1A, RDS(ON) = 450m? @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：505.57 Kbytes 頁數(shù)：5 Pages

CET

華瑞

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features ? 9.4A, 250V, RDS(on) = 0.42? @VGS = 10 V ? Low gate charge ( typical 15.5 nC) ? Low Crss ( typical 15 pF) ? Fast switching

文件：729.53 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導體

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

文件：869.21 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導體