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          首頁 >CED02N6>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          CED02N6

          N-Channel Logic Level Enhancement Mode Field Effect Transistor

          FEATURES ● 600V , 1.9A , RDS(ON)=5? @VGS=10V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-251 & TO-252 package.

          文件:44.81 Kbytes 頁數(shù):5 Pages

          CET

          華瑞

          CED02N65A

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 650V, 1.2A, RDS(ON) = 10.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

          文件:646.5 Kbytes 頁數(shù):4 Pages

          CET-MOS

          華瑞

          CED02N6A

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 600V, 1.3A, RDS(ON) = 8.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

          文件:609.09 Kbytes 頁數(shù):4 Pages

          CET-MOS

          華瑞

          CED02N6A

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 650V, 1.3A, RDS(ON) = 8 ? @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:123.74 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CED02N6G

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES ■ 600V, 2A, RDS(ON) = 5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

          文件:423.36 Kbytes 頁數(shù):4 Pages

          CET

          華瑞

          CED02N6G

          N-Channel Enhancement Mode Field Effect Transistor

          FEATURES 600V, 2A, RDS(ON) = 5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

          文件:615.01 Kbytes 頁數(shù):4 Pages

          CET-MOS

          華瑞

          CED02N65B

          N Channel MOSFET

          CET

          華瑞

          CED02N65G

          N Channel MOSFET

          CET

          華瑞

          CED02N6A

          N Channel MOSFET

          CET

          華瑞

          技術(shù)參數(shù)

          • BVDSS(V):

            650

          • Rds(on)mΩ@10V:

            10500

          • ID(A):

            1.2

          • Qg(nC)@10V(typ):

            6.9

          • RθJC(℃/W):

            3.5

          • Pd(W):

            35.7

          • Configuration:

            Single

          • Polarity:

            N

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          CET
          23+
          TO251
          7000
          絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請放心訂購!
          詢價(jià)
          CET
          24+
          TO251
          278
          詢價(jià)
          SR
          23+
          TO-251
          5000
          原裝正品,假一罰十
          詢價(jià)
          NEXPERIA/安世
          23+
          SOT89
          69820
          終端可以免費(fèi)供樣,支持BOM配單!
          詢價(jià)
          C
          22+
          TO-251
          6000
          十年配單,只做原裝
          詢價(jià)
          CET
          23+
          TO-251
          7300
          專注配單,只做原裝進(jìn)口現(xiàn)貨
          詢價(jià)
          CET
          12+
          TO-251
          15000
          全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
          詢價(jià)
          CET/華瑞
          23+
          TO251
          38888
          原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
          詢價(jià)
          CET
          TO-251
          50000
          一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨
          詢價(jià)
          CET/華瑞
          22+
          T0-251
          100000
          代理渠道/只做原裝/可含稅
          詢價(jià)
          更多CED02N6供應(yīng)商 更新時(shí)間2026-1-20 14:02:00
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