N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 5A, RDS(ON) = 32m? @VGS = 10V. RDS(ON) = 45m? @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-89 package.

文件：139.22 Kbytes 頁數：4 Pages

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N-Channel 6 0-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFETs ? 175 °C Maximum Junction Temperature ? Compliant to RoHS Directive 2002/95/EC

文件：989.77 Kbytes 頁數：6 Pages

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N Channel MOSFET

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 25A, RDS(ON) = 28m? @VGS = 10V. RDS(ON) = 39m? @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：111.36 Kbytes 頁數：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 7.5A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：108.81 Kbytes 頁數：4 Pages

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N-Channel 20V (D-S) MOSFET

FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? Optimized for High-Side Synchronous Rectifier Operation ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? Notebook CPU Core - High-Side Switch

文件：1.00897 Mbytes 頁數：9 Pages

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