N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 7.5A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：108.81 Kbytes 頁數(shù)：4 Pages

CET

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N-Channel 20V (D-S) MOSFET

FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? Optimized for High-Side Synchronous Rectifier Operation ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? Notebook CPU Core - High-Side Switch

文件：1.00897 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 7.5A, RDS(ON) = 28mW @VGS = 10V. RDS(ON) = 40mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：362.49 Kbytes 頁數(shù)：4 Pages

CET-MOS

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N Channel MOSFET

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 8A, RDS(ON) = 29mΩ @VGS = 10V. RDS(ON) = 36mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount

文件：347.72 Kbytes 頁數(shù)：4 Pages

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華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 8A, RDS(ON) = 29mW @VGS = 10V. RDS(ON) = 36mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired. RDS(ON) = 55mW @VGS = 2.5V.

文件：569.54 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：299.98 Kbytes 頁數(shù)：4 Pages

CET

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N Channel MOSFET

CET

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