絲?。?strong>C8A；Package：SOT-23；350 mW ZENER DIODE 5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ5221B Series silicon zener diode is a high quality voltage regulator for use in industrial, commercial, entertainment and computer applications. Higher voltage devices are available on special order. MARKING CODE: SEE MARKING CODES ON ELECTRICAL CHARACT

文件：100.6 Kbytes 頁(yè)數(shù)：2 Pages

CENTRAL

絲?。?strong>C8A；Package：SOT-23；SURFACE MOUNT SILICON ZENER DIODE 350mW, 5 TOLERANCE

文件：401.14 Kbytes 頁(yè)數(shù)：2 Pages

CENTRAL

絲?。?strong>C8A；Package：SOT-23；SURFACE MOUNT SILICON ZENER DIODE

文件：401.14 Kbytes 頁(yè)數(shù)：2 Pages

CENTRAL

RF Power LDMOS Transistor N?Channel Enhancement?Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features ? Advanced high performance in?package Doherty ? Greater negative gate?source voltage range for improved Class C operation

文件：385.37 Kbytes 頁(yè)數(shù)：17 Pages

恩XP

RF Power LDMOS Transistor

N?Channel Enhancement?Mode Lateral MOSFET This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. Features ? Greater negative gate?source voltage range for improved Class C operation ? On?chip matching (50 ohm in

文件：362.83 Kbytes 頁(yè)數(shù)：20 Pages

恩XP

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features ? High terminal impedances for optimal broadband performance ? Advanced high performance in--package Doherty ? Able to withstand extremely high output VSWR and broadband operating conditions

文件：414.55 Kbytes 頁(yè)數(shù)：18 Pages

恩XP

RF Power LDMOS Transistor

文件：364.8 Kbytes 頁(yè)數(shù)：9 Pages

恩XP

RF Power GaN Transistor

文件：379.6 Kbytes 頁(yè)數(shù)：9 Pages

恩XP

RF Power LDMOS Transistor

文件：389.33 Kbytes 頁(yè)數(shù)：16 Pages

恩XP

Surface Mount Termination 8 Watts, 50廓

文件：103.15 Kbytes 頁(yè)數(shù)：3 Pages

ANAREN