RF Power LDMOS Transistor N?Channel Enhancement?Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features ? Advanced high performance in?package Doherty ? Greater negative gate?source voltage range for improved Class C operation

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RF Power LDMOS Transistor

N?Channel Enhancement?Mode Lateral MOSFET This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. Features ? Greater negative gate?source voltage range for improved Class C operation ? On?chip matching (50 ohm in

文件：362.83 Kbytes 頁數(shù)：20 Pages

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1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features ? High terminal impedances for optimal broadband performance ? Advanced high performance in--package Doherty ? Able to withstand extremely high output VSWR and broadband operating conditions

文件：414.55 Kbytes 頁數(shù)：18 Pages

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Surface Mount Termination 8 Watts, 50廓

文件：103.15 Kbytes 頁數(shù)：3 Pages

ANAREN

RF Power GaN Transistor

文件：379.6 Kbytes 頁數(shù)：9 Pages

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RF Power LDMOS Transistor

文件：389.33 Kbytes 頁數(shù)：16 Pages

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