650 V Discrete Silicon Carbide Schottky Diodes

650 V, 20 A, TO-220-2 package, Industrial qualified, Discrete SiC Schottky Diode ? Lowest forward voltage (Vf) drop over temperature in the industry\n? Robust MPS technology with high surge capability\n? Direct drop-in replacement for current silicon diodes and other silicon carbide diodes;

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6th Generation 650 V, 20 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.24597 Mbytes 頁數(shù)：9 Pages

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Package：TO-220-2；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：650V SIC 20A TO-220 DIODE

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Silicon Carbide Schottky Diode Z-Rec? Rectifier

Features ? New 6th Generation Technology ? Low Forward Voltage Drop (VF ) ? Zero Reverse Recovery Current ? Zero Forward Recovery Voltage ? Low Leakage Current (Ir ) ? Temperature-Independent Switching Behavior ? Positive Temperature Coefficient on VF Benefits ? Higher System Level Effi

文件：745.71 Kbytes 頁數(shù)：6 Pages

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6th Generation 650 V, 20 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：870.82 Kbytes 頁數(shù)：8 Pages

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6th Generation 650 V, 20 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：952.75 Kbytes 頁數(shù)：8 Pages

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