絲印：C6D20065；Package：TO-247-3；Silicon Carbide Schottky Diode Z-Rec? Rectifier

Features ? New 6th Generation Technology ? Low Forward Voltage Drop (VF ) ? Zero Reverse Recovery Current ? Zero Forward Recovery Voltage ? Low Leakage Current (Ir ) ? Temperature-Independent Switching Behavior ? Positive Temperature Coefficient on VF Benefits ? Higher System Level Effi

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6th Generation 650 V, 20 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

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650 V Discrete Silicon Carbide Schottky Diodes

650 V, 20 A, TO-247-3 package, Industrial qualified, Discrete SiC Schottky Diode ? Lowest forward voltage (Vf) drop over temperature in the industry\n? Zero reverse-recovery charge (Qrr) for ultra-fast switching operations\n? Robust MPS technology with high surge capability\n? High reverse-voltage blocking capability\n? Direct drop-in replacement for current silicon diodes and o;

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Package：TO-247-3；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：GEN 6 650V 20 A SBD

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