絲?。?strong>C60；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01

文件：1.58341 Mbytes 頁(yè)數(shù)：7 Pages

SY

順燁電子

絲?。?strong>C60；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件：3.35517 Mbytes 頁(yè)數(shù)：6 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲印：C60；Package：V-DFN3030-8；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features ? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Complementary Pair MOSFET ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? Qualified to AEC-Q101 Standards for High Reliab

文件：657.9 Kbytes 頁(yè)數(shù)：10 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/c6000/marking.html">C6000；Package：SC-76；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁(yè)數(shù)：73 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/c6052/marking.html">C6052；Package：SC-72；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁(yè)數(shù)：73 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/c6022sd/marking.html">C6022SD；Package：SO-8；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features - Low Input Capacitance - Low On-Resistance - Fast Switching Speed - Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 Standards for High Reliability

文件：612.23 Kbytes 頁(yè)數(shù)：10 Pages

DIODES

美臺(tái)半導(dǎo)體

絲印：C6040SD；Package：SO-8；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

文件：365.71 Kbytes 頁(yè)數(shù)：9 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/c60ed1/marking.html">C60ED1；Package：PG-TO247-3-AI；Emitter Controlled Diode Rapid 1 Advanced Isolation Rapid Switching Emitter Controlled Diode in fully isolated package

Features: ? 650V Emitter Controlled technology ? Temperature stable behaviour of key parameters ? Low forward voltage (VF) ? Low reverse recovery charge (Qrr) ? Low reverse recovery current (Irrm) ? Maximum junction temperature 175°C ? 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min ?

文件：1.34097 Mbytes 頁(yè)數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/c602b/marking.html">C602B；Package：DFN2020-6L；N-Channel and P-Channel Complementary Power MOSFET

文件：1.07378 Mbytes 頁(yè)數(shù)：9 Pages

YANGJIE

揚(yáng)杰電子

1 WATTS 100-8KV SINGLE OUTPUT DC/DC INDUSTRIAL

Features ? Low ripple ? Miniature size ? Regulated ? 0-100 programmable output ? High stability, typically

文件：2.47171 Mbytes 頁(yè)數(shù)：2 Pages

POWERBOX