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          首頁 >絲印反查>C6D10065

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          C6D10065E

          絲?。?strong>C6D10065;Package:TO-252-2;Silicon Carbide Schottky Diode Z-Rec? Rectifier

          Features ? New 6th Generation Technology ? Low Forward Voltage Drop (VF ) ? Zero Reverse Recovery Current ? Zero Forward Recovery Voltage ? Low Leakage Current (Ir ) ? Temperature-Independent Switching Behavior ? Positive Temperature Coefficient on VF Benefits ? Higher System Level Effi

          文件:716.6 Kbytes 頁數(shù):6 Pages

          WOLFSPEED

          C6D10065A

          絲印:C6D10065;Package:TO-220-2;Silicon Carbide Schottky Diode

          文件:708.97 Kbytes 頁數(shù):6 Pages

          CREE

          科銳

          C6D10065E

          絲?。?strong>C6D10065;Package:TO-252-2;Silicon Carbide Schottky Diode Z-Rec? Rectifier

          Features ? New 6th Generation Technology ? Low Forward Voltage Drop (VF ) ? Zero Reverse Recovery Current ? Zero Forward Recovery Voltage ? Low Leakage Current (Ir ) ? Temperature-Independent Switching Behavior ? Positive Temperature Coefficient on VF Benefits ? Higher System Level Effi

          文件:716.6 Kbytes 頁數(shù):6 Pages

          WOLFSPEED

          C6D10065A

          絲?。?strong>C6D10065;Package:TO-220-2;Silicon Carbide Schottky Diode

          文件:708.97 Kbytes 頁數(shù):6 Pages

          CREE

          科銳

          C6D10065A

          6th Generation 650 V, 10 A Silicon Carbide Schottky Diode

          Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

          文件:1.73513 Mbytes 頁數(shù):9 Pages

          WOLFSPEED

          C6D10065G

          6th Generation 650 V, 10 A Silicon Carbide Schottky Diode

          Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

          文件:1.0688 Mbytes 頁數(shù):6 Pages

          WOLFSPEED

          C6D10065Q

          6th Generation 650 V, 10 A Silicon Carbide Schottky Diode

          Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

          文件:707.23 Kbytes 頁數(shù):7 Pages

          WOLFSPEED

          供應商型號品牌批號封裝庫存備注價格
          24+
          N/A
          64000
          一級代理-主營優(yōu)勢-實惠價格-不悔選擇
          詢價
          Wolfspeed Inc.
          25+
          TO-252-2
          9350
          獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
          詢價
          Wolfspeed
          25+
          Tube
          4430
          鄭重承諾只做原裝進口現(xiàn)貨
          詢價
          Cree/Wolfspeed
          25+
          電聯(lián)咨詢
          7800
          公司現(xiàn)貨,提供拆樣技術支持
          詢價
          Cree/Wolfspeed
          50
          詢價
          CREE/科銳
          24+
          TO252-2
          60000
          詢價
          Wolfspeed
          2024
          2500
          全新、原裝
          詢價
          CREE
          23+
          10000
          原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
          詢價
          THOMASBETTS/ANSLEY
          60
          全新原裝 貨期兩周
          詢價
          2000
          原裝現(xiàn)貨
          詢價
          更多C6D10065供應商 更新時間2026-1-18 11:06:00
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