isc Silicon NPN Power Transistor

DESCRIPTION ? High Power Gain- : Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V ? High Reliability APPLICATIONS ? Designed for RF power amplifiers on VHF band mobile radio applications.

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ISC

無錫固電

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

DESCRIPTION 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10dB, @VCC = 13.5V, Po = 6W, f = 175MHz ● Emitter ballasted construction, gold metallization for high reliabil

文件：127.93 Kbytes 頁數(shù)：3 Pages

MITSUBISHI

三菱電機(jī)

Channel Photomultipliers

Features ? Ultra high anode sensitivity up to 107 A/W ? Extremely low dark current, typically 3pA @ 106 gain ? Very low equivalent noise input (down to 10 -17 W) ? Very high stability in dark current (no ”bursts”) ? High gain exceeding 108 ? Very high dynamic range ? Compact dimensions ? W

文件：10.84 Kbytes 頁數(shù)：11 Pages

PERKINELMER

Channel Photomultipliers

Features ? Ultra high anode sensitivity up to 107 A/W ? Extremely low dark current, typically 3pA @ 106 gain ? Very low equivalent noise input (down to 10 -17 W) ? Very high stability in dark current (no ”bursts”) ? High gain exceeding 108 ? Very high dynamic range ? Compact dimensions ? W

文件：10.84 Kbytes 頁數(shù)：11 Pages

PERKINELMER

Channel Photomultipliers

Features ? Ultra high anode sensitivity up to 107 A/W ? Extremely low dark current, typically 3pA @ 106 gain ? Very low equivalent noise input (down to 10 -17 W) ? Very high stability in dark current (no ”bursts”) ? High gain exceeding 108 ? Very high dynamic range ? Compact dimensions ? W

文件：10.84 Kbytes 頁數(shù)：11 Pages

PERKINELMER

Channel Photomultipliers

Features ? Ultra high anode sensitivity up to 107 A/W ? Extremely low dark current, typically 3pA @ 106 gain ? Very low equivalent noise input (down to 10 -17 W) ? Very high stability in dark current (no ”bursts”) ? High gain exceeding 108 ? Very high dynamic range ? Compact dimensions ? W

文件：10.84 Kbytes 頁數(shù)：11 Pages

PERKINELMER

絲?。?a target="_blank" title="Marking" href="/c1971/marking.html">C1971；Package：T-30E；NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

DESCRIPTION 2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications. FEATURES ● High power gain: Gpe ≥ 10dB, @VCC = 13.5V, Po = 6W, f = 175MHz ● Emitter ballasted construction, gold metallization for high reliabil

文件：127.93 Kbytes 頁數(shù)：3 Pages

MITSUBISHI

三菱電機(jī)

NPN EPITAXAIL PLANAR TYPE TRANSISTOR FOR RF POWER AMPLIFIERS

DESCRIPTION\n2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications.FEATURES\n● High power gain: Gpe ≥ 10dB,\n?? @VCC = 13.5V, Po = 6W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n?? reliability ● High power gain: Gpe ≥ 10dB,\n?? @VCC = 13.5V, Po = 6W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n?? reliability and good performances.\n● TO-220 package similar is combinient for mounting.\n● Ability to withstand more than 20:1 load\n?? VSWR when operated at VCC =;

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