isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

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ISC

無錫固電

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 3.3 ? ■ AVALANCHE RUGGEDNESS TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPE

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STMICROELECTRONICS

意法半導體

Easy driver for cost effective application

DESCRIPTION ? High speed switching ? Low RDS(ON) ? Easy driver for cost effective application APPLICATIONS ? Automotive power actuator drivers ? Motor controls ? DC-DC converters

文件：66.93 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

SEMICONDUCTORS

文件：2.43533 Mbytes 頁數(shù)：31 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

SIPMOS Power Transistor (N channel Enhancement mode)

Infineon

英飛凌

Trans MOSFET N-CH 800V 2.1A 3-Pin(3+Tab) ISOWATT220

NJS