P-CHANNEL POWER MOSFET FOR AUDIO APPLICATIONS

[MAGNATEC] POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES ? HIGH SPEED SWITCHING ? P–CHANNEL POWER MOSFET ? SEMEFAB DESIGNED AND DIFFUSED ? HIGH VOLTAGE (160V & 200V) ? HIGH ENERGY RATING ? ENHANCEMENT MODE ? INTEGRAL PROTECTION DIODE ? N–CHANNEL ALSO AVAILABLE AS BUZ900DP & B

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ETCList of Unclassifed Manufacturers

未分類制造商

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -16A@ TC=25℃ · Drain Source Voltage -VDSS= -160V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無(wú)錫固電

BUZ905D - 晶體管, MOSFET, P溝道, 16 A, -160 V, 750 mohm, -1.5 V

The BUZ905D is a P-channel enhancement-mode Power MOSFET offers -160V drain source voltage and -16A continuous drain current. ·High speed switching\n·Semefab designed and diffused\n·High voltage\n·High energy rating\n·Integral protection diode\n·BUZ900D complimentary P-channel\n·Double die package for maximum power and heat-sink space;

TT Electronics

P-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES ? HIGH SPEED SWITCHING ? P–CHANNEL POWER MOSFET ? SEMEFAB DESIGNED AND DIFFUSED ? HIGH VOLTAGE (160V & 200V) ? HIGH ENERGY RATING ? ENHANCEMENT MODE ? INTEGRAL PROTECTION DIODE ? N–CHANNEL ALSO AVAILABLE AS BUZ900P &

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Sample More Signals, Faster and Dynamically

Key Features ? 3-slot mainframes with built-in 6 ? digit DMM ? Basic 0.003 DCV accuracy ? 9 switch, RF and control plug-in modules, including a new 4-channel simultaneous sampling digitizer ? Up to 450 channel/s scan rate ? Up to 120 channels per system ? Up to one million points scanning m

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KEYSIGHT

是德科技

6-WAY POWER DIVIDER SURFACE MOUNT MODEL

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SYNERGY