NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

description The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti parallel diode. The revolutionary design ensures that

文件：166.15 Kbytes 頁數(shù)：8 Pages

POINN

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

description The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti parallel diode. The revolutionary design ensures that

文件：726.51 Kbytes 頁數(shù)：7 Pages

TRSYS

Transys Electronics

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

description\nThe new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti parallel diode. The revolutionary design ensures that the

Power Innovations

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

description\nThe new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti parallel diode. The revolutionary design ensures that the

Power Innovations