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    首頁(yè) >BUL128>規(guī)格書列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    BUL128

    isc Silicon NPN Power Transistor

    DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch mode power supplies.

    文件:265.57 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無錫固電

    BUL128

    HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

    DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

    文件:72.78 Kbytes 頁(yè)數(shù):7 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    BUL128

    HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

    DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

    文件:79.68 Kbytes 頁(yè)數(shù):7 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    BUL128

    High Voltage Fast-Switching NPN Power Transistor

    DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

    文件:168.91 Kbytes 頁(yè)數(shù):5 Pages

    SUNTAC

    BUL128

    HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR

    DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is design

    文件:65.379 Kbytes 頁(yè)數(shù):1 Pages

    TGS

    BUL128

    HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

    文件:235.5 Kbytes 頁(yè)數(shù):7 Pages

    STMICROELECTRONICS

    意法半導(dǎo)體

    BUL128

    HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

    ST

    意法半導(dǎo)體

    BUL128

    Package:TO-220-3;包裝:卷帶(TR) 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS NPN 400V 4A TO220

    STMICROELECTRONICS

    意法半導(dǎo)體

    BUL128D

    HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR

    DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is d

    文件:65.58 Kbytes 頁(yè)數(shù):1 Pages

    TGS

    BUL128D

    Silicon NPN Power Transistors

    DESCRIPTION ·With TO-220C package ·High voltage, high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies.

    文件:66.76 Kbytes 頁(yè)數(shù):3 Pages

    ISC

    無錫固電

    晶體管資料

    • 型號(hào):

      BUL128

    • 別名:

      三極管、晶體管、晶體三極管

    • 生產(chǎn)廠家:

    • 制作材料:

      Si-N+Di

    • 性質(zhì):

      開關(guān)管 (S)_功率放大 (L)

    • 封裝形式:

      直插封裝

    • 極限工作電壓:

      700V

    • 最大電流允許值:

      4A

    • 最大工作頻率:

      <1MHZ或未知

    • 引腳數(shù):

      3

    • 可代換的型號(hào):

      BUF620,BUH50,

    • 最大耗散功率:

      70W

    • 放大倍數(shù):

    • 圖片代號(hào):

      B-10

    • vtest:

      700

    • htest:

      999900

    • atest:

      4

    • wtest:

      70

    產(chǎn)品屬性

    • 產(chǎn)品編號(hào):

      BUL128

    • 制造商:

      STMicroelectronics

    • 類別:

      分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)

    • 包裝:

      卷帶(TR)

    • 晶體管類型:

      NPN

    • 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):

      500mV @ 1A,4A

    • 電流 - 集電極截止(最大值):

      100μA

    • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):

      14 @ 2A,5V

    • 工作溫度:

      150°C(TJ)

    • 安裝類型:

      通孔

    • 封裝/外殼:

      TO-220-3

    • 供應(yīng)商器件封裝:

      TO-220

    • 描述:

      TRANS NPN 400V 4A TO220

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    STMicroelectronics
    25+
    N/A
    21000
    正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
    詢價(jià)
    ST
    2012+
    原裝正品
    10000
    全新原裝,公司大量現(xiàn)貨供應(yīng),絕對(duì)正品
    詢價(jià)
    ST
    25+
    DIP3
    75
    ⊙⊙新加坡大量現(xiàn)貨庫(kù)存,深圳常備現(xiàn)貨!歡迎查詢!⊙
    詢價(jià)
    ST
    06+
    ?TO-220
    2000
    全新原裝 絕對(duì)有貨
    詢價(jià)
    ST
    23+
    TO220
    5000
    原裝正品,假一罰十
    詢價(jià)
    ST
    24+
    142
    詢價(jià)
    ST
    24+
    原廠封裝
    20000
    原裝現(xiàn)貨假一罰十
    詢價(jià)
    ST
    17+
    TO-220
    6200
    詢價(jià)
    ST
    24+
    DIP3
    21322
    公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
    詢價(jià)
    ST
    17+
    1000/Box
    9888
    全新進(jìn)口原裝,現(xiàn)貨庫(kù)存
    詢價(jià)
    更多BUL128供應(yīng)商 更新時(shí)間2026-1-21 16:12:00

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