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          首頁(yè) >BUL128D>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          BUL128D

          Silicon NPN Power Transistor

          EATURES ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed DESCRIPTION ·Designed for use in lighting applications and low cost switch-mode power supplies.

          文件:267.21 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          BUL128D

          HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR

          DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is d

          文件:65.58 Kbytes 頁(yè)數(shù):1 Pages

          TGS

          BUL128D

          Silicon NPN Power Transistors

          DESCRIPTION ·With TO-220C package ·High voltage, high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies.

          文件:66.76 Kbytes 頁(yè)數(shù):3 Pages

          ISC

          無(wú)錫固電

          BUL128DB

          isc Silicon NPN Power Transistor

          DESCRIPTION ? Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ? Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ? Very High Switching Speed APPLICATIONS ? Designed for electronic ballasts for fluorescent lighting.

          文件:193.57 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          BUL128D-B

          HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

          DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

          文件:72.78 Kbytes 頁(yè)數(shù):7 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          BUL128DR7

          Silicon NPN transistor in a TO-220 Plastic Package.

          Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. Applications Electronic ballasts for fluorescent lighting, fl

          文件:850.41 Kbytes 頁(yè)數(shù):6 Pages

          FOSHAN

          藍(lán)箭電子

          BUL128DR8

          Silicon NPN transistor in a TO-220F Plastic Package.

          Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. Applications Electronic ballasts for fluorescent lighting,fl

          文件:802.63 Kbytes 頁(yè)數(shù):6 Pages

          FOSHAN

          藍(lán)箭電子

          BUL128D-B

          HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

          文件:228.24 Kbytes 頁(yè)數(shù):8 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          BUL128D-B_05

          HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

          文件:228.24 Kbytes 頁(yè)數(shù):8 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          BUL128D

          Power Transistors

          Wanli

          萬(wàn)立

          Wanli

          晶體管資料

          • 型號(hào):

            BUL128D

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-N+Di

          • 性質(zhì):

            INTEGR_DAMPER_DI

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            700V

          • 最大電流允許值:

            4A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            3

          • 可代換的型號(hào):

            BUL39D,

          • 最大耗散功率:

            70W

          • 放大倍數(shù):

          • 圖片代號(hào):

            B-10

          • vtest:

            700

          • htest:

            999900

          • atest:

            4

          • wtest:

            70

          技術(shù)參數(shù)

          • Ic(max):

            2000

          • BVCBO:

            4000

          • VCEO:

            700

          • BVEBO:

            400

          • hFE(MIN):

            9

          • hFE(MAX):

            8

          • VCE:

            40

          • IC:

            5

          • VCE(sat):

            2000

          • IC(mA):

            0.5

          • IB(mA):

            4000

          • fT:

            1000

          • Package:

            TO-220

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          ST
          05+
          原廠原裝
          7051
          只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
          詢價(jià)
          ST
          17+
          TO-220
          6200
          詢價(jià)
          ST
          20+
          TO-220
          38900
          原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
          詢價(jià)
          ST
          22+
          TO-220
          6000
          十年配單,只做原裝
          詢價(jià)
          ST
          26+
          SMD1808
          86720
          全新原裝正品價(jià)格最實(shí)惠 假一賠百
          詢價(jià)
          ST/意法半導(dǎo)體
          22+
          TO-220
          25000
          只做原裝進(jìn)口現(xiàn)貨,專注配單
          詢價(jià)
          KI
          25+
          TO220
          880000
          明嘉萊只做原裝正品現(xiàn)貨
          詢價(jià)
          ST
          23+
          SDM/DIP
          7300
          專注配單,只做原裝進(jìn)口現(xiàn)貨
          詢價(jià)
          ST
          23+
          TO-220
          7000
          詢價(jià)
          ST
          25+
          TO-TO-220
          63660
          獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
          詢價(jià)
          更多BUL128D供應(yīng)商 更新時(shí)間2026-1-20 16:11:00
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