| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
BUK7675-55A | 絲印:BUK7675-55A;Package:SOT404;N-channel TrenchMOS standard level FET 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits ? 文件:727.18 Kbytes 頁數(shù):12 Pages | NEXPERIA 安世 | NEXPERIA | |
BUK7675-55A | 絲印:BUK7675-55A;Package:SOT404;N-channel TrenchMOS standard level FET 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits ? 文件:727.18 Kbytes 頁數(shù):12 Pages | NEXPERIA 安世 | NEXPERIA | |
BUK7675-55A | 絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK;Package:TO-263;N-Channel 60 V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Surface Mount ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Logic-Level Gate Drive ? Fast Switching ? Compliant to RoHS Directive 2002/95/EC 文件:1.32322 Mbytes 頁數(shù):9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | |
BUK7675-55A | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 20.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- 文件:333.41 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | |
BUK7675-55A | TrenchMOS standard level FET Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS? technology, featuring very low on-state resistance. Features ■ TrenchMOS? technology ■ Q101 compliant ■ 175 °C rated ■ Standard level compatible. Applications ■ Automotive and general 文件:334.52 Kbytes 頁數(shù):15 Pages | PHI PHI | PHI | |
N-channel TrenchMOS standard level FETN-channel TrenchMOS standard level FET 文件:272.37 Kbytes 頁數(shù):12 Pages | PHI PHI | PHI |
詳細(xì)參數(shù)
- 型號:
BUK7675-55A
- 功能描述:
MOSFET TAPE13 PWR-MOS
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
恩XP |
SOT-263 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價 | |||
恩XP |
2021+ |
NA |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
恩XP |
18+ |
NA |
4800 |
詢價 | |||
恩XP |
18+ |
NA |
4800 |
詢價 | |||
恩XP |
23+ |
N/A |
12000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
PH |
24+ |
SOT404TO-263D2PAK |
8866 |
詢價 | |||
恩XP |
23+ |
TO-263 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
VBsemi(臺灣微碧) |
2447 |
TO-263 |
105000 |
50個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
恩XP |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持 |
詢價 | ||
恩XP |
2022+ |
D2PAK |
12888 |
原廠代理 終端免費(fèi)提供樣品 |
詢價 |
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