絲?。?strong>BUK9675-100A；Package：SOT404；N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits ? AEC

文件：715.99 Kbytes 頁(yè)數(shù)：12 Pages

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絲印：BUK9675-100A；Package：SOT404；N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits ? AEC

文件：715.99 Kbytes 頁(yè)數(shù)：12 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switch

文件：333.71 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications.

文件：82.73 Kbytes 頁(yè)數(shù)：9 Pages

PHI

PHI

N-channel TrenchMOS logic level FET

文件：254.87 Kbytes 頁(yè)數(shù)：12 Pages

PHI

PHI