絲?。?strong>BUK；Transil?

Description The SMBJ Transil series has been designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2, and MIL STD 883, method 3015, and electrical over stress according to IEC 61000-4-4 and 5. These devices are more generally used against surges below 6

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絲印：BUK7214-75B；Package：DPAK；N-channel TrenchMOS standard level FET

1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits

文件：736.76 Kbytes 頁數(shù)：12 Pages

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絲印：BUK7277-55A；Package：SOT428；N-channel TrenchMOS standard level FET

1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits ?

文件：731.27 Kbytes 頁數(shù)：12 Pages

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絲?。?a target="_blank" title="Marking" href="/buk7610-100b/marking.html">BUK7610-100B；Package：SOT404；N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

文件：742.39 Kbytes 頁數(shù)：12 Pages

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絲印：BUK761R4-30E；Package：D2PAK；N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits ? AEC Q101 compliant ? Repetitive avalanche

文件：332.08 Kbytes 頁數(shù)：14 Pages

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絲?。?a target="_blank" title="Marking" href="/buk761r7-40e/marking.html">BUK761R7-40E；Package：D2PAK；N-channel TrenchMOS standard level FET

1. General description Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits ? AEC Q101 compliant ? Repetitive avalanch

文件：719.85 Kbytes 頁數(shù)：13 Pages

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絲印：BUK762R6-40E；Package：D2PAK；N-channel TrenchMOS standard level FET

1. General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits ? AEC Q101 compliant ? Repetitive avalanche r

文件：720.18 Kbytes 頁數(shù)：13 Pages

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絲?。?a target="_blank" title="Marking" href="/buk7631-100e/marking.html">BUK7631-100E；Package：SOT404；N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits ? AEC Q101 compliant ? Repetitive avalanche

文件：723.29 Kbytes 頁數(shù)：13 Pages

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絲?。?a target="_blank" title="Marking" href="/buk763r9-60e/marking.html">BUK763R9-60E；Package：D2PAK；N-channel TrenchMOS standard level FET

1. General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits ? AEC Q101 compliant ? Repetitive avalanche r

文件：720.4 Kbytes 頁數(shù)：13 Pages

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絲印：BUK6217-55C；Package：DPAK；N-channel TrenchMOS intermediate level FET

文件：761.11 Kbytes 頁數(shù)：14 Pages

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