isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 14A@ TC=25℃ · Drain Source Voltage -VDSS= 50V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：306.28 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use

文件：218.43 Kbytes 頁數(shù)：6 Pages

STMICROELECTRONICS

意法半導(dǎo)體

MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use

文件：218.43 Kbytes 頁數(shù)：6 Pages

STMICROELECTRONICS

意法半導(dǎo)體

MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use

文件：213.57 Kbytes 頁數(shù)：6 Pages

STMICROELECTRONICS

意法半導(dǎo)體