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          首頁 >BUL116>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BUL116

          MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

          DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use

          文件:218.43 Kbytes 頁數(shù):6 Pages

          STMICROELECTRONICS

          意法半導體

          BUL116

          MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

          ST

          意法半導體

          BUL116D

          MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

          DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use

          文件:218.43 Kbytes 頁數(shù):6 Pages

          STMICROELECTRONICS

          意法半導體

          BULD116D

          MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

          DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use

          文件:213.57 Kbytes 頁數(shù):6 Pages

          STMICROELECTRONICS

          意法半導體

          BULT116D

          MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

          DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use

          文件:209.04 Kbytes 頁數(shù):6 Pages

          STMICROELECTRONICS

          意法半導體

          BYV116

          Rectifier diodes Schottky barrier

          GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting p

          文件:53.09 Kbytes 頁數(shù):6 Pages

          PHI

          PHI

          PHI

          詳細參數(shù)

          • 型號:

            BUL116

          • 制造商:

            STMICROELECTRONICS

          • 制造商全稱:

            STMicroelectronics

          • 功能描述:

            MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

          供應商型號品牌批號封裝庫存備注價格
          ST
          23+
          TO220
          5000
          原裝正品,假一罰十
          詢價
          ST
          24+
          TO220ABNONISOL
          8866
          詢價
          ST/意法
          23+
          TO-220-3
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          ST
          25+
          TO220
          15
          原裝正品,假一罰十!
          詢價
          INFINEON
          24+
          SOT363
          9118
          公司現(xiàn)貨庫存,支持實單
          詢價
          ST
          24+
          TO-220
          7780
          只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718
          詢價
          ST
          25+
          TO220
          16900
          原裝,請咨詢
          詢價
          ST
          26+
          TO220
          60000
          只有原裝 可配單
          詢價
          ST
          24+
          TO-220
          2500
          原裝現(xiàn)貨熱賣
          詢價
          ST
          25+
          TO-220
          2987
          只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
          詢價
          更多BUL116供應商 更新時間2026-1-20 15:35:00
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